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Proceedings Paper

Electrochemical etching of deep-macropore array on p-type silicon wafers
Author(s): Yanjun Gao; Guozheng Wang; Qingduo Duanmu; Jingquan Tian
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Paper Abstract

The formation of deep macropore array of p-type Silicon in HF electrolyte has been investigated. Then a series of electrochemical etching experiments and tests were carried out in three poles electrobath using different concentration HF electrolyte. HF concentration is a very important factor that determined whether electrochemical reaction was accomplished or not. By means of theoretical analysis and investigation, it is generally assumed that etching proceeds through sequential reaction of Si-H groups with F- to form Si-X, which determined whether electrochemical etching reaction was carried out or not. The electrochemical etching of p-type Silicon macropore array in aqueous fluoride solutions is satisfied with economic requirements for costs of fabricating deep macropores. The consequences are benefit to Silicon electrochemical deep macropore array etching technology.

Paper Details

Date Published: 30 December 2004
PDF: 4 pages
Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.572181
Show Author Affiliations
Yanjun Gao, Jilin Univ. (China)
Guozheng Wang, Changchun Univ. of Science and Technology (China)
Qingduo Duanmu, Changchun Univ. of Science and Technology (China)
Jingquan Tian, Changchun Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 5641:
MEMS/MOEMS Technologies and Applications II
Zhichun Ma; Guofan Jin; Xuyuan Chen, Editor(s)

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