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Proceedings Paper

Correlation of surface topography and coating damage with changes in the responsivity of silicon PIN photodiodes
Author(s): Diana L. Huffaker; Rodger M. Walser; Michael F. Becker
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Paper Abstract

Laser-induced morphological damage initiated by single 10 ns, 1.06 micron Nd:YAG laser pulses was observed on three types of silicon PIN photodiodes. When the samples were irradiated at fluences above the melting threshold, the damage morphologies were observed to vary according to the type of coating and the fluence. Nomarski microscopy at 200X was used to analyze the laser-induced topography at the damage sites. The topography was characterized generally by ripples, ridges and boiling marks in order of increasing fluence. However, all test fluence levels remained below the threshold for electrical degradation and no increase in leakage current was detected. The detector responsivity at the damage sites was mapped by means of a probe laser. The sample was translated within its plane in order to obtain a series of raster scans across each damage site. A comparison of the topographical data and responsitivity data suggests that local variations in responsivity were correlated with laser-induced surface roughness and with the removal of the thin-films.

Paper Details

Date Published: 1 June 1991
PDF: 16 pages
Proc. SPIE 1441, Laser-Induced Damage in Optical Materials: 1990, (1 June 1991); doi: 10.1117/12.57213
Show Author Affiliations
Diana L. Huffaker, Univ. of Texas/Austin (United States)
Rodger M. Walser, Univ. of Texas/Austin (United States)
Michael F. Becker, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 1441:
Laser-Induced Damage in Optical Materials: 1990
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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