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Proceedings Paper

The dark current mechanism of HgCdTe photovoltaic detector passivated by different structure
Author(s): Tao Sun; Yan Jin Li; Xing Guo Chen; Xiao Ning Hu; Li He
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Paper Abstract

The HgCdTe photovoltaic detectors passivated by single ZnS layer and dual (CdTe+ZnS) layers were fabricated in same wafer. The fabricated devices were characterized by measurements of the diode dark I-V characteristics and low-frequency noise. The dual-layer passivated diodes showed the better performance compared to the single layer passivated diodes, and modeling of diode dark current mechanisms indicated that the performance of the diodes passivated by single ZnS were found to be strongly affected by tunneling current related to the surface defects, By the analysis of X-ray reciprocal space maps, It was found the Qy scan direction broadening of HgCdTe epitaxial layer passivated by ZnS was wider after passivation, which confirmed the existence of defects in the surface of HgCdTe epitaxial layer passivated by ZnS.

Paper Details

Date Published: 10 January 2005
PDF: 8 pages
Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.571918
Show Author Affiliations
Tao Sun, Shanghai Institute of Technical Physics, CAS (China)
Yan Jin Li, Shanghai Institute of Technical Physics, CAS (China)
Xing Guo Chen, Shanghai Institute of Technical Physics, CAS (China)
Xiao Ning Hu, Shanghai Institute of Technical Physics, CAS (China)
Li He, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5640:
Infrared Components and Their Applications
Haimei Gong; Yi Cai; Jean-Pierre Chatard, Editor(s)

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