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Proceedings Paper

Extraction of exposure modeling parameters of thick resist
Author(s): Chi Liu; Jinglei Du; Shijie Liu; Xi Duan; Boliang Luo; Jianhua Zhu; Yongkang Guo; Chunlei Du
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Paper Abstract

Experimental and theoretical analysis indicates that many nonlinear factors existing in the exposure process of thick resist can remarkably affect the PAC concentration distribution in the resist. So the effects should be fully considered in the exposure model of thick resist, and exposure parameters should not be treated as constants because there exists certain relationship between the parameters and resist thickness. In this paper, an enhanced Dill model for the exposure process of thick resist is presented, and the experimental setup for measuring exposure parameters of thick resist is developed. We measure the intensity transmittance curve of thick resist AZ4562 under different processing conditions, and extract the corresponding exposure parameters based on the experiment results and the calculations from the beam propagation matrix of the resist films. With these modified modeling parameters and enhanced Dill model, simulation of thick-resist exposure process can be effectively developed in the future.

Paper Details

Date Published: 30 December 2004
PDF: 11 pages
Proc. SPIE 5641, MEMS/MOEMS Technologies and Applications II, (30 December 2004); doi: 10.1117/12.571891
Show Author Affiliations
Chi Liu, Sichuan Univ. (China)
Jinglei Du, Sichuan Univ. (China)
Shijie Liu, Shanxi Univ. of Technology (China)
Xi Duan, Sichuan Univ. (China)
Boliang Luo, Sichuan Univ. (China)
Jianhua Zhu, Sichuan Univ. (China)
Yongkang Guo, Sichuan Univ. (China)
Chunlei Du, State Key Lab. of Optical Technology on Microfabrication, CAS (China)

Published in SPIE Proceedings Vol. 5641:
MEMS/MOEMS Technologies and Applications II
Zhichun Ma; Guofan Jin; Xuyuan Chen, Editor(s)

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