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Proceedings Paper

Properties of liquid-nitrogen-cooled electronic elements
Author(s): Eugeniusz Trojnar; Stanislaw Trojanowski; Roman Czechowicz; Mariusz Derwiszynski; Krzysztof Kocyba
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Paper Abstract

We present the results of theoretical analysis and of measurements of properties of both passive and active electronic components to be incorporated in a lownoise amplifier for use with a HgCdTe photodiode in a detector of weak 1O. 6im laser pulses. The effect of the working temperature of resistors and of capacitors on changes of their resistance and capacitance and on the noise level has been investigated and it is found that the most suitable types of these devices for cooled operation are metallized resistors and mica and styroflex capacitors. In selected applications monolithic ferroelectric capacitors may also be used. The noise and the amplifying properties of a broad range of bipolar MOSFET and JFET transistors were also measured and are compared graphically. On the basis of these results the JFET transistors are most suitable for low temperature use.

Paper Details

Date Published: 1 August 1991
PDF: 6 pages
Proc. SPIE 1391, Laser Technology III, (1 August 1991); doi: 10.1117/12.57172
Show Author Affiliations
Eugeniusz Trojnar, Institute for Low Temperature and Structure Research (Poland)
Stanislaw Trojanowski, Institute for Low Temperature and Structure Research (Poland)
Roman Czechowicz, Military Academy of Technology (Poland)
Mariusz Derwiszynski, Military Academy of Technology (Poland)
Krzysztof Kocyba, Military Academy of Technology (Poland)

Published in SPIE Proceedings Vol. 1391:
Laser Technology III
Wieslaw L. Wolinski; Bohdan K. Wolczak; Jerzy K. Gajda; Danuta Gajda; Ryszard S. Romaniuk, Editor(s)

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