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Proceedings Paper

Properties of ZnO nanotips selectively grown by MOCVD
Author(s): Hanhong Chen; Jian Zhong; Gaurav Saraf; Zheng Zhang; Yicheng Lu; Linus A. Fetter; Chien-Shing Pai
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Paper Abstract

We report the catalyst-free growth of ZnO nanotips by metalorganic chemical vapor deposition (MOCVD) on various substrates, including c-sapphire, (100) Si, titanium, glass and SiO2. Structural, optical, and electrical properties of ZnO nanotips are investigated. ZnO nanotips are found to be single crystalline and oriented along the c-axis normal to the growth plane. The nanotips exhibit dominant free excitonic transition and enhanced luminescence efficiency with negligible deep-level emission. Controllable in situ Ga doping during MOCVD growth reduces the resistivity of ZnO nanotips. Selective growth of ZnO nanotips has been achieved on patterned Ti/r-Al2O3, SiO2/r-Al2O3, and silicon-on-sapphire (SOS) substrates. It provides the potential to integrate ZnO nanotips and ZnO epitaxial films on a single patterned substrate for various device applications.

Paper Details

Date Published: 19 January 2005
PDF: 6 pages
Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); doi: 10.1117/12.571509
Show Author Affiliations
Hanhong Chen, Rutgers Univ. (United States)
Jian Zhong, Rutgers Univ. (United States)
Gaurav Saraf, Rutgers Univ. (United States)
Zheng Zhang, Rutgers Univ. (United States)
Yicheng Lu, Rutgers Univ. (United States)
Linus A. Fetter, Lucent Technologies/Bell Labs. (United States)
New Jersey Nanotechnology Consortium (United States)
Chien-Shing Pai, Lucent Technologies/Bell Labs. (United States)
New Jersey Nanotechnology Consortium (United States)


Published in SPIE Proceedings Vol. 5592:
Nanofabrication: Technologies, Devices, and Applications
Warren Y-C. Lai; Stanley Pau; O. Daniel Lopez, Editor(s)

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