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Proceedings Paper

Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV
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Paper Abstract

Alternating Aperture Phase Shift masks (alt-APSM) are being increasingly used to meet present day lithography requirements by providing increased resolution. The quartz dry etch is a critical step in the manufacture of these photomasks. Etch depth linearity, phase uniformity and minimum etched surface roughness are critical factors. To achieve this, etched quartz structures need to have good selectivity to resist / chrome, vertical sidewalls and good etch depth uniformity over the mask area. Using the Mask Etcher IV at Unaxis USA, a series of experiments were performed to study and identify the trends in quartz etching for photomasks. Etch depth uniformity was measured using an n&k1700RT and etch depth linearity from feature sizes ~0.4 micron to ~1.4 micron was measured using an AFM. Cross sections of the ~0.6 micron structure were obtained using a SEM to check for profile and any evidence of micro trenching. After several set-up experiments, an optimized process to minimize etch depth linearity and improve etch depth uniformity was obtained and is presented here.

Paper Details

Date Published: 6 December 2004
PDF: 7 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.571468
Show Author Affiliations
Sunil Srinivasan, Unaxis USA, Inc. (United States)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Russ Westerman, Unaxis USA, Inc. (United States)
Dave J. Johnson, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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