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Proceedings Paper

Surface treatment effects of sapphire for high-quality III-nitride film growth
Author(s): Yinzhen Wang; Lingling Zhang; Shengming Zhou; Jun Xu
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Paper Abstract

Sapphire is widely used material for blue emitting diode, laser diode devices, visible-infrared window and radome applications. Although there is a large mismatch in the lattice constants and thermal expansion coefficient between nitride and sapphire, sapphire is still known as the most commonly used substrate in the GaN device for its physical robustness and high temperature stability. The ensuing component performance is highly dependent on the quality of the surface processing. In this work the effects of mechanical polishing, chemo-mechanical polishing (CMP) as well as CMP and subsequent chemical etching on the properties of sapphire substrate surfaces has been studied. The sapphire substrates have been investigated by means of polarizing microscopy, atomic force microscopy (AFM), X-ray diffraction rocking curves (XRCs) and micro-Raman spectroscopy. The results show that CMP with subsequent chemically etching yields the best quality sapphire substrate surfaces. The optimized conditions to realize good substrate and smoother surface morphology have been obtained.

Paper Details

Date Published: 20 January 2005
PDF: 6 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.571058
Show Author Affiliations
Yinzhen Wang, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Lingling Zhang, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Shengming Zhou, Shanghai Institute of Optics and Fine Mechanics, CAS (China)
Jun Xu, Shanghai Institute of Optics and Fine Mechanics, CAS (China)

Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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