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Proceedings Paper

Recent development activities and future plans for EUV lithography in Japan
Author(s): Shinji Okazaki
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Paper Abstract

EUV lithography is one of the most promising technologies for the delineation of 45-nm half-pitch patterns (hp 45 on the ITRS Roadmap) and below. However, many problems remain to be solved before it can be considered a practical tool. The light source is the most critical issue for obtaining a reasonable throughput, and the next is the fabrication of defect-free multilayer mask blanks. The construction of an aspherical optical system is also a key issue. From an economic standpoint, cost is a crucial concern regarding use of this technology in an industrial environment. In Japan, four consortia are working on the development of EUV lithography: EUVA is investigating the source and the system, including the metrology of an aspherical optical system; the Leading Project is working on the basic technology for a laser-produced plasma source; ASET is developing multilayer masks and resist process technology; and MIRAI is researching actinic defect detection for multilayer mask blanks. This paper describes the recent activities of these consortia and the future plans for EUVL development in Japan.

Paper Details

Date Published: 19 January 2005
PDF: 11 pages
Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); doi: 10.1117/12.570969
Show Author Affiliations
Shinji Okazaki, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5592:
Nanofabrication: Technologies, Devices, and Applications
Warren Y-C. Lai; Stanley Pau; O. Daniel Lopez, Editor(s)

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