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Proceedings Paper

Electronic transport characteristics across nanoscaled doped Si gaps between oppositely polarized ferromagnetic Schottcky barriers
Author(s): Jian Q. Wang; Nam N. Kim; Pete Eames; Jim M. Daughton
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Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, ; doi: 10.1117/12.570815
Show Author Affiliations
Jian Q. Wang, SUNY/Binghamton (United States)
Nam N. Kim, SUNY/Binghamton (United States)
Pete Eames, NVE Corp. (United States)
Jim M. Daughton, NVE Corp. (United States)


Published in SPIE Proceedings Vol. 5592:
Nanofabrication: Technologies, Devices, and Applications
Warren Y-C. Lai; Stanley Pau; O. Daniel Lopez, Editor(s)

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