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Proceedings Paper

Photosensitive porous low-k interlayer dielectric film
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Paper Abstract

Characteristics of photosensitive low-k methylsilsesquioxane (MSQ) were investigated by use of electron-beam lithography. Photosensitive low-k MSQ makes it possible to realize via and trench patterns for Cu damascene technology in the ultra-large-scale-integrated (ULSI) circuit multilevel interconnect integration without dryetching processes. In this paper the dependences of exposure dose, humidification treatment and development method on critical dimension were investigated. It is found that longer humidification treatment resulted in the lower critical exposure dose, while the feature sizes were enlarged. The feature sizes had a linear correlation with exposure dose. Then reduction of the critical exposure dose minimizes the feature sizes. The development with ultrasonic wave was developed to reduce the critical exposure dose for 100 nm line and space pattern with the aspect ratio 3.3.

Paper Details

Date Published: 19 January 2005
PDF: 5 pages
Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); doi: 10.1117/12.570753
Show Author Affiliations
Shin-Ichiro Kuroki, Hiroshima Univ. (Japan)
Takamaro Kikkawa, Hiroshima Univ. (Japan)

Published in SPIE Proceedings Vol. 5592:
Nanofabrication: Technologies, Devices, and Applications
Warren Y-C. Lai; Stanley Pau; O. Daniel Lopez, Editor(s)

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