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Proceedings Paper

Theoretical and experimental investigation on carrier recovery time in semiconductor optical amplifier
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Paper Abstract

A relatively perfect steady-state and dynamic numerical model of SOA considering facet reflectivity, gain dispersion and amplified spontaneous emission (ASE) spectrum is established to make it closer to reality. Based on the proposed numerical model, carrier recovery time is investigated under different external conditions theoretically and experimentally. Via the analysis of results of simulation and experiments, schemes for accelerating carrier recovery are explored.

Paper Details

Date Published: 31 January 2005
PDF: 12 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.570686
Show Author Affiliations
Jiang Zhong, Huazhong Univ. of Science and Technology (China)
Xinliang Zhang, Huazhong Univ. of Science and Technology (China)
Deming Liu, Huazhong Univ. of Science and Technology (China)
Dexiu Huang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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