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Proceedings Paper

High-power Al-free SCH-SQW lasers grown by LPE
Author(s): Zhonghui Li; Ling Wang; Jinhua Yang; Hanben Niu
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Paper Abstract

The Al-free separate confinement hetero-structure (SCH) single quantum-well (SQW) lasers were grown by liquid phase epitaxy (LPE). For 100µm stripe laser with cavity length of 1mm, continuous wave (CW) output power of 4W, slope efficiency of 1.32W/A and far-field pattern of 11°×28°were obtained.

Paper Details

Date Published: 20 January 2005
PDF: 5 pages
Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); doi: 10.1117/12.570654
Show Author Affiliations
Zhonghui Li, Shenzhen Univ. (China)
Tianjin Univ. (China)
Changchun Univ. of Science and Technology (China)
Ling Wang, Changchun Univ. of Science and Technology (China)
Jinhua Yang, Changchun Univ. of Science and Technology (China)
Hanben Niu, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 5628:
Semiconductor Lasers and Applications II
Jian-quan Yao; Yung Jui Chen; Seok Lee, Editor(s)

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