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Proceedings Paper

Model for self-consistent analysis of arbitrary MQW structures
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Paper Abstract

Self-consistent computations of the potential profile in complex semiconductor heterostructures can be successfully applied for comprehensive simulation of the gain and the absorption spectra, for the analysis of the capture, escape, tunneling, recombination, and relaxation phenomena and as a consequence it can be used for studying dynamical behavior of semiconductor lasers and amplifiers. However, many authors use non-entirely correct ways for the application of the method. In this paper the versatile model is proposed for the investigation, optimization, and the control of parameters of the semiconductor lasers and optical amplifiers which may be employed for the creation of new generations of the high-density photonic systems for the information processing and data transfer, follower and security arrangements. The model is based on the coupled Schrödinger, Poisson's and drift-diffusion equations which allow to determine energy quantization levels and wave functions of charge carriers, take into account built-in fields, and to investigate doped MQW structures and those under external electric fields influence. In the paper the methodology of computer realization based on our model is described. Boundary conditions for each equation and consideration of the convergence for the method are included. Frequently encountered in practice approaches and errors of self-consistent computations are described. Domains of applicability of the main approaches are estimated. Application examples of the method are given. Some of regularities of the results which were discovered by using self-consistent method are discussed. Design recommendations for structure optimization in respect to managing some parameters of AMQW structures are given.

Paper Details

Date Published: 20 December 2004
PDF: 12 pages
Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); doi: 10.1117/12.570646
Show Author Affiliations
Ivan M. Safonov, Kharkov National Univ. of Radio Electronics (Ukraine)
Aleksey V. Shulika, Kharkov National Univ. of Radio Electronics (Ukraine)
Igor A. Sukhoivanov, Kharkov National Univ. of Radio Electronics (Ukraine)
Univ. of Guanajuato (Mexico)
Volodimir V. Lysak, Kharkov National Univ. of Radio Electronics (Ukraine)
Gwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5594:
Physics and Applications of Optoelectronic Devices
Joachim Piprek, Editor(s)

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