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Proceedings Paper

Fabrication and properties for white LED with InGaN SQW
Author(s): Zhonghui Li; Zhijian Yang; Xiaomin Ding; Guoyi Zhang; Yuchun Feng; Baoping Guo; Hanben Niu
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Paper Abstract

High brightness white light-emitting diode (LED) was fabricated by using the self-produced InGaN single quantum-well (SQW) blue LED chip and YAG:Ce3+ phosphor. The luminous intensity of the white LED was up to 2.3cd, the chromaticity coordinate was (0.28,0.34), and the color-rendering index was about 75 at forward current of 20mA and room temperature.

Paper Details

Date Published: 12 January 2005
PDF: 5 pages
Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); doi: 10.1117/12.570640
Show Author Affiliations
Zhonghui Li, Shenzhen Univ. (China)
Tianjin Univ. (China)
Changchun Univ. of Science and Technology (China)
Zhijian Yang, Peking Univ. (China)
Xiaomin Ding, Peking Univ. (China)
Guoyi Zhang, Peking Univ. (China)
Yuchun Feng, Shenzhen Univ. (China)
Baoping Guo, Shenzhen Univ. (China)
Hanben Niu, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 5632:
Light-Emitting Diode Materials and Devices
Gang Yu; Chuangtian Chen; Changhee Lee, Editor(s)

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