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Proceedings Paper

Extracting model parameters for MQW lasers' three-level model
Author(s): Cao Li; Jiang Shan
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Paper Abstract

Multiquantum-well (MQW) laser diodes are widely used and being researched for many years. And simulation makes an important part in improving the characteristics of laser diodes. Simulating an equivalent circuit model of lasers is usually used. Many circuit models based on carriers’ and photons’ rate equations have been developed. In the three level scheme, quasi-two-dimensional gateway states between unbound and confined states has been introduced. And it treats each well independently from all the others. So It has more precision than many other models. But before simulation, the parameters in this model are needed. How to get these parameters is vital. But no many people tell us how to do it. This is a complex work. Many parameters can be got from calculation, others must be got from measurement. In this paper the method of getting the parameters is provided. Using these parameters and three level Model for MQW lasers, the dynamic and static behavior are simulated by SPICE circuit emulator.

Paper Details

Date Published: 31 January 2005
PDF: 7 pages
Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); doi: 10.1117/12.570616
Show Author Affiliations
Cao Li, Wuhan Research Institute of Posts and Telecommunications (China)
Jiang Shan, Wuhan Research Institute of Posts and Telecommunications (China)

Published in SPIE Proceedings Vol. 5624:
Semiconductor and Organic Optoelectronic Materials and Devices
Chung-En Zah; Yi Luo; Shinji Tsuji, Editor(s)

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