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Proceedings Paper

Wavelength-dependent spot defects on advanced embedded attenuated phase-shift masks
Author(s): Christopher K. Magg; Jason M. Benz; Louis Kindt; Adam C. Smith; Jay Burnham; Jeffrey Riendeau; Christy Johnson; Rick Kontra
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Paper Abstract

At the challenging ground rules required for 90 nm and 65 nm photomask production, new types of photomask defects are becoming increasingly prevalent. This paper discusses one particular new defect type found on critical 90 nm embedded attenuated phase-shift masks (EAPSMs). These defects had varying transmission characteristics depending on the wavelength used for analysis. Given that photomask inspection wavelength has historically lagged behind lithography wavelength, this type of defect can go undetected and poses a grave risk to wafer lithography yield. Detection and characterization methodologies will be presented along with aerial image analysis and wafer print evaluation results.

Paper Details

Date Published: 6 December 2004
PDF: 9 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570563
Show Author Affiliations
Christopher K. Magg, IBM Corp. (United States)
Jason M. Benz, IBM Corp. (United States)
Louis Kindt, IBM Corp. (United States)
Adam C. Smith, IBM Corp. (United States)
Jay Burnham, IBM Corp. (United States)
Jeffrey Riendeau, IBM Corp. (United States)
Christy Johnson, IBM Corp. (United States)
Rick Kontra, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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