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Proceedings Paper

Exciton mobility in a GaAs/AlGaAs quantum well
Author(s): Partha Ray; P. K. Basu
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Paper Abstract

We have calculated the mobility of 1s-excitons confined in a GaAs/AlGaAs quantum well limited by different scattering mechanisms over a temperature range from 10 K to 150 K for different well-widths.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57039
Show Author Affiliations
Partha Ray, Univ. of Calcutta (India)
P. K. Basu, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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