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Proceedings Paper

Properties of 35-GHz InP DDR
Author(s): Shankar P. Pati; J. P. Banerjee; S. K. Ray
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Paper Abstract

Microwave device characteristics of 35 GHz InP DDR have been obtained through accurate numerical simulation, and those are compared with the properties of Si and GaAs DDRs. The results indicate InP as a promising material for fabrication of IMPATT devices.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57038
Show Author Affiliations
Shankar P. Pati, Sambalpur Univ. (India)
J. P. Banerjee, Univ. of Calcutta (India)
S. K. Ray, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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