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Proceedings Paper

Improving low-temperature performance of infrared thin-film interference filters utilizing temperature dependence of refractive index of Pb1-xGexTe
Author(s): Bin Li; Suying Zhang; Ping Xie; L. Zhang; Dingquan Liu; Fengshan Zhang
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Paper Abstract

Pb1-xGexTe is a pseudobinary alloy of IV-VI narrow-gap semiconductor PbTe and GeTe, of which maximum refractive index corresponds to the ferroelectric phase transition. Since the temperature coefficient of refractive index can be tunable from negative to positive by changing the Ge composition, it is possible to utilize the intrinsic property in the fabrication of infrared thin-film interference filters. A simple Fabry-Perot type narrow-bandpass filter was fabricated, in which Pb0.94Ge0.06Te was substituted for PbTe. It was found that the low-temperature stability of the filter is obviously improved: in the temperature range of 80-300 K, the shift of center wavelength with temperature is reduced from 0.48 nm.K-1 to 0.23 nm.K-1; furthermore, the peak transmittance of filter fabricated with Pb0.94Ge0.06Te is ~3% over that fabricated with PbTe.

Paper Details

Date Published: 10 January 2005
PDF: 7 pages
Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); doi: 10.1117/12.570365
Show Author Affiliations
Bin Li, Shanghai Institute of Technical Physics, CAS (China)
Suying Zhang, Shanghai Institute of Technical Physics, CAS (China)
Ping Xie, Shanghai Institute of Technical Physics, CAS (China)
L. Zhang, Shanghai Institute of Technical Physics, CAS (China)
Dingquan Liu, Shanghai Institute of Technical Physics, CAS (China)
Fengshan Zhang, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5640:
Infrared Components and Their Applications
Haimei Gong; Yi Cai; Jean-Pierre Chatard, Editor(s)

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