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Proceedings Paper

Practical LEEPL masks for sub-65-nm node
Author(s): Kenta Yotsui; Tomoya Sumida; Yoshiyuki Negishi; Takashi Yoshii; Kojiro Itoh; Akira Tamura
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Paper Abstract

We manufactured LEEPL masks for 65-nm node and evaluated the masks for the critical dimension (CD), image placement (IP) and defects. Although the CD uniformity was 8.0 nm (3σ), an improvement is promising by resist upgrading. The CD linearity was within 5 nm (3σ) through the range of 80- to 300-nm width and the 65-nm hole patterns were successfully resolved. The local and global IP errors obtained were 23.2/16.4 nm and 8.76/6.66 nm (in the x/y directions), respectively. A defect inspection was conducted and detected defects were classified. Most of the defects were miss-placement and miss-size, which seemed to be non-killer defects. On the other hands, foreign materials that must be killer defects were analyzed using energy dispersion X-ray (EDX) and found that they consist of Si. Si fragments mainly came from strut walls and by employing new backside-etching conditions, we improved roughness of strut walls. As a result, no closed defects were detected.

Paper Details

Date Published: 6 December 2004
PDF: 10 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570353
Show Author Affiliations
Kenta Yotsui, Toppan Printing Co., Ltd. (Japan)
Tomoya Sumida, Toppan Printing Co., Ltd. (Japan)
Yoshiyuki Negishi, Toppan Printing Co., Ltd. (Japan)
Takashi Yoshii, Toppan Printing Co., Ltd. (Japan)
Kojiro Itoh, Toppan Printing Co., Ltd. (Japan)
Akira Tamura, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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