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Proceedings Paper

Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films
Author(s): S. S.V. Avadhani; S. Kasi Viswanathan; B. S. V. Gopalam
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Paper Abstract

Thermal oxides on polycrystalline GaAs thin films are grown at 10-04 Torr and 600 K. The oxide layers are studied by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). The core level spectra of Ga and As are obtained at different takes of angles. The oxide content of the films was found to increase with a decrease in the take of angle. The As2O3 content was found to be less than that of Ga2O3.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57034
Show Author Affiliations
S. S.V. Avadhani, Indian Institute of Technology (India)
S. Kasi Viswanathan, Indian Institute of Technology (India)
B. S. V. Gopalam, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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