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Proceedings Paper

Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing
Author(s): Revati N. Kulkarni; N. M. Kulkarni; Arvind D. Shaligram
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Paper Abstract

Due to the involvement of shorter time and energy consumption, rapid thermal processing (RTP) technique finds its success in Semiconductor processing. The Al-Si ohmic contact has been formed and the effect of alloying temperatures between 450 degree(s)C and 550 degree(s)C on this contact has been studied. The nature of the contact is probed well by positron lifetime spectroscopy (PLTS). The measurements are supported by I - V characterization and SEM.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57032
Show Author Affiliations
Revati N. Kulkarni, Univ. of Poona (India)
N. M. Kulkarni, Univ. of Poona (India)
Arvind D. Shaligram, Univ. of Poona (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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