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Proceedings Paper

Concentration dependence of diffusivity in polysilicon
Author(s): M. R. Murti; K. V. Reddy
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Paper Abstract

Diffusion of phosphorus in polycrystalline silicon is carried out from POC13 source at 1000 degree(s)C for 1 hour. The diffusion profiles were obtained and were analyzed to get diffusivity as a function of concentration.

Paper Details

Date Published: 1 February 1992
PDF: 2 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57028
Show Author Affiliations
M. R. Murti, Indian Institute of Technology (India)
K. V. Reddy, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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