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Proceedings Paper

Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET
Author(s): Vinaya Kumar Singh; S. R. Singh; B. B. Pal
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Paper Abstract

The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs optical field effect transistor have been analyzed. The study reveals that the gate-source capacitance increases with gate-source voltage, first slowly, and then sharply under normally OFF condition with the increase of modulated frequency. However, the surface recombination reduces these effects depending upon the trap center density. These variations are small in a normally ON device. Also, the drain-source resistance is found to increase with the increase of modulating frequency, but it reduces with the reduction of trap- center density at a fixed flux density and drain-source voltage.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57026
Show Author Affiliations
Vinaya Kumar Singh, Banaras Hindu Univ. (United States)
S. R. Singh, Regional Engineering College (India)
B. B. Pal, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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