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Proceedings Paper

Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon
Author(s): Dharmendra P. Singh; P. S. Basak
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Paper Abstract

Grain boundaries play an important role in the conductance of polycrystalline semiconductors. In the present work we have studies for the first time the effect of doping concentration on the grain boundary barrier height for different interface state density for polysilicon, considering that the grain boundary has certain finite width.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57021
Show Author Affiliations
Dharmendra P. Singh, Banaras Hindu Univ. (India)
P. S. Basak, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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