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Proceedings Paper

The advanced nanofabrication technology
Author(s): Ming Liu; Qiuxia Xu; Baoqin Chen; Changqing Xie; Tianchun Ye; Xinchun Liu
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Paper Abstract

Some research results in advanced optical lithography, Electron beam lithography, X-ray lithography are introduced in this paper. For advanced optical lithography, optical proximity correction and phase-shift masking (PSM) are studied, and 150nm pattern is achieved by i-line Stepper using transparent PSM. For e-beam lithography, the resist process, proximity effect correction and mix & match technologies are investigated, and 27nm CMOS device is successfully fabricated. The 0.15μm GaAs PHEMT devices are successfully fabricated by employing X-ray lithography.

Paper Details

Date Published: 27 January 2005
PDF: 8 pages
Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); doi: 10.1117/12.570206
Show Author Affiliations
Ming Liu, Institute of Microelectronics, CAS (China)
Qiuxia Xu, Institute of Microelectronics, CAS (China)
Baoqin Chen, Institute of Microelectronics, CAS (China)
Changqing Xie, Institute of Microelectronics, CAS (China)
Tianchun Ye, Institute of Microelectronics, CAS (China)
Xinchun Liu, Institute of Microelectronics, CAS (China)


Published in SPIE Proceedings Vol. 5645:
Advanced Microlithography Technologies
Yangyuan Wang; Jun-en Yao; Christopher J. Progler, Editor(s)

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