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Proceedings Paper

Tools for defect characterization in semiconductor devices: EBIC and voltage contrast
Author(s): M. Natarajan; V. K. Vaidyan; M. K. Radhakrishnan
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Paper Abstract

The scanning electron microscope has been widely recognized as one of the most important surface analytical instruments by providing a higher resolution morphology and composition of surfaces. The instrument also provides a unique feature of assessing the electrical operation of the complex devices using the electron beam induced current and voltage contrast modes of operation.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57020
Show Author Affiliations
M. Natarajan, Univ. of Kerala (India)
V. K. Vaidyan, Univ. of Kerala (India)
M. K. Radhakrishnan, Vikram Sarabhai Space Ctr. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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