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Proceedings Paper

Characterization of hydrogenated amorphous silicon carbide films
Author(s): S. Uthanna
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Paper Abstract

A-SiC:H films were prepared by magnetron sputtering of silicon in an atmosphere of argon, hydrogen and acetylene gas on c-Si and glass substrates maintained at a temperature of 250 degree(s)C. It was indicated from the FTIR spectroscopy that the vibrational modes of SiC- and SiHm-shifted to higher energies due to the incorporation of carbon in a-Si:H network. The decrease of dark and photo conductivity with the carbon content was attributed to the additional defects produced by alloying of carbon in the a-Si:H.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57018
Show Author Affiliations
S. Uthanna, Sri Venkateswara Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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