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Proceedings Paper

Kinetics of thermal donors and new oxygen donors in silicon
Author(s): D. Tandon; Shyam Singh
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Paper Abstract

A model for the oxygen-related donors in Cz-silicon with emphasis on their generation, reduction, and subsequent behavior in the transition region has been developed. A modified SiOx model is presented to account for the new oxygen donors. A schematic diagram of the formation of donors and related defects so developed in silicon from the un-annealed to the annealed stage is also given.

Paper Details

Date Published: 1 February 1992
PDF: 7 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57014
Show Author Affiliations
D. Tandon, G.B. Pant Univ. of Agriculture and Technology (India)
Shyam Singh, G.B. Pant Univ. of Agriculture and Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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