Share Email Print
cover

Proceedings Paper

Growth of silicon nitride by PECVD
Author(s): V. Jayan; Dev Alok; P. R. Vaya
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon nitride and silicon oxynitride films were grown using silane and locally available nitrogen and ammonia by PECVD technique. The results of structural characterization by IR absorption and ellipsometry studies are reported. MNS test structures were fabricated and a surface state density of approximately 1011 cm-2 was obtained from C-V measurements. Study on the probable current condition mechanism in these films showed results consistent with Frenkel-Poole mechanism.

Paper Details

Date Published: 1 February 1992
PDF: 9 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57013
Show Author Affiliations
V. Jayan, Indian Institute of Technology (India)
Dev Alok, Indian Institute of Technology (India)
P. R. Vaya, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

© SPIE. Terms of Use
Back to Top