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Proceedings Paper

Characterization of 193-nm resists for optical mask manufacturing
Author(s): Hans Fosshaug; Adisa Paulsson; Uldis Berzinsh; Helena Magnusson
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Paper Abstract

The push for smaller linewidths and tighter critical dimension (CD) budgets forced manufacturers of optical pattern generators to move from traditional i-line to deep ultraviolet (DUV) resist processing. Entering the DUV area was not without pain. The process conditions, especially exposure times of a few hours, put very tough demands on the resist material itself. However, today 248nm laser writers are fully operating using a resist process that exhibits the requested resolution, CD uniformity and environmental stability. The continuous demands of CD performance made Micronic to investigate suitable resist candidate materials for the next generation optical writer using 193nm excimer laser exposure. This paper reports on resist benchmarking of one commercial as well as several newly developed resists. The resists were investigated using a wafer scanner. The data obtained illustrate the current performance of 193nm photoresists, and further demonstrate that despite good progress in resist formulation optimization, the status is still a bit from the required lithographic performance.

Paper Details

Date Published: 6 December 2004
PDF: 12 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.570097
Show Author Affiliations
Hans Fosshaug, Micronic Laser Systems AB (Sweden)
Adisa Paulsson, Micronic Laser Systems AB (Sweden)
Uldis Berzinsh, Micronic Laser Systems AB (Sweden)
Helena Magnusson, Micronic Laser Systems AB (Sweden)


Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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