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Proceedings Paper

Quantum-well injection transit time device
Author(s): B. B. Pal; R. U. Khan
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Paper Abstract

A quantum well injection transit time (QWITT) diode has been proposed recently to improve the performance of quantum well devices incorporating the effect of transit time of carriers. Earlier, transit time devices such as IMPATT, BARITT, DOVATT, TRAPATT, TUNETT show different types of performances with certain limitations. QWITT is a low noise device applicable to the sub-millimeter frequency range. Large signal simulations show that a QWITT device may be capable of producing approximately +5 dBm power at 200 GHz.

Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57001
Show Author Affiliations
B. B. Pal, Banaras Hindu Univ. (India)
R. U. Khan, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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