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Proceedings Paper

Development and characterization of device grade thin films of compound semiconductors
Author(s): P. C. Mathur
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Paper Abstract

Thin films play a crucial role in the present day science and technology due to their wide use in a large number of active and passive devices. Il—VI compound semiconductors have drawn considerable interest due to their potential applications in photovoltaic devices, photoresistors, heterojunction diodes, electrolumine scent layers and SAW devices. Thin films of these compounds are most promising for utilization in solar cells, particularly the cadmium chalcogenides which have received intensive attention, since their band gaps lie very close to the range of maximum theoreti cally attainable energy conversion efficiency. Cadmium telluride and zine selenide are another important material among the il-VI compound materials with a direct band gaps. Recently, ZnSe has emerged an impor tant material for use in non—linear optical devices as it posses large polarizability and non—linear co— efficient. A Brief Review of the work carried out on the Growth and Characterization of these Il—VI compound semiconductor viz. CdS and ZnSe has been presented here. The characteristic structural, electrical and Optical properties of thin films can be tailored by controlling the fabrication processes e.g. deposition rate, substrate temperature, selection and preparation of substrate, doping, ambient pressure)post deposition annealing e.g. thermal or laser annealing, passivation under high pressure of hydrogen.

Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56998
Show Author Affiliations
P. C. Mathur, Univ. of Delhi (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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