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Proceedings Paper

Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride
Author(s): Rakesh Kumar; M. B. Dutt; R. Nath; Vishnu Gopal; Y. P. Khosla; K. K. Sharma
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Paper Abstract

Radiation damage due to B+ ion implantation in p-type HgCdTe has been found to create Hg interstitials giving rise to n-type conversion. The implantation energies were kept at 50 and 100 keV with a dose of 1 X 1013 cm-2 each. The effect of implantation with ascending and descending orders of energies were found to be quite different from each other. Radiation enhanced diffusion is thought to be responsible for this anomaly.

Paper Details

Date Published: 1 February 1992
PDF: 6 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56993
Show Author Affiliations
Rakesh Kumar, Solid State Physics Lab. (India)
M. B. Dutt, Solid State Physics Lab. (India)
R. Nath, Solid State Physics Lab. (India)
Vishnu Gopal, Solid State Physics Lab. (India)
Y. P. Khosla, Solid State Physics Lab. (India)
K. K. Sharma, Univ. of Meerut (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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