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Proceedings Paper

Photostable amorphous-silicon films by low-pressure chemical vapour deposition
Author(s): K. K. Sharma; Claudio Manfredotti
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Paper Abstract

Photostable hydrogenated amorphous-silicon films have been deposited by disilane decomposition in a quartz reactor 2 m in length and 5 in. in diameter. A deposition temperature of around 420 degree(s)C, pressure in the interval of 5 to 10 Torr, and gas holding time around 250 sec are the most appropriate parameters to deposit fairly good quality films having density states ranging from 1016 to 1017 cm-3 eV-1 and Urbach's tail from 70 meV to 100 meV.

Paper Details

Date Published: 1 February 1992
PDF: 6 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56990
Show Author Affiliations
K. K. Sharma, Univ. of Meerut (India)
Claudio Manfredotti, Univ. of Torino (Italy)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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