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Proceedings Paper

Effect of ultrathin metal layers on the plasma anodization of GaAs
Author(s): Sh. Lanyi; E. Pincik; V. Nadazdy
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Paper Abstract

The anodization of GaAs in RF plasma may be strongly affected by thin metal layers, evaporated on top of the semiconductor before oxidation. Thin (approximately equals 2 nm) Al films first cause a retention followed by a dramatic increase of the oxidation rate. The energy spectrum of the interface is altered and the lattice contraction below the oxide is reduced. The oxidation is exceptionally fast beneath a Sm film. Other metals (Au, Cr) of similar or even smaller thickness prevent the successful oxidation or result in oxide of poor quality.

Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56988
Show Author Affiliations
Sh. Lanyi, Institute of Physics (Slovak Republic)
E. Pincik, Institute of Physics (Slovak Republic)
V. Nadazdy, Institute of Physics (Slovak Republic)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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