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Proceedings Paper

Characterization of defect detection sensitivity in inspection of mask substrates and blanks for extreme-ultraviolet lithography
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Paper Abstract

Defect detection sensitivity of a multi-beam confocal inspection system operating at a wavelength of 488 nm is characterized using experiments and image modeling. Experimental data on defect sensitivity are reported for programmed defects on mask substrates and blanks that are being developed for extreme ultraviolet lithography. The effects of sample surface roughness on the detection sensitivity and signal-to-noise levels are quantified. Theoretical analysis of confocal imaging of defects is in excellent agreement with measured defect images. Modeling is used to predict inspection sensitivity for defects commonly found on mask blanks.

Paper Details

Date Published: 6 December 2004
PDF: 10 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569849
Show Author Affiliations
Edita Tejnil, Intel Corp. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Alan R. Stivers, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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