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Proceedings Paper

Transport properties of Bi-doped Ge-Se glasses
Author(s): Pawan Sikka
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Paper Abstract

A series of bulk amorphous samples of Ge15Se85 - xBix (x equals 0, 2, 4, 6, 8, 10) were prepared by the rapid quenching technique. Electrical transport properties such as dc conductivity and thermoelectric power were measured in the temperature range 80 - 350 K. An abrupt increase in the dc conductivity is observed due to the incorporation of Bi into the host Ge-Se system. The conduction sign changed from p to n at 8 < X < 10 as evidenced by the measurement of thermopower. The experimental data is explained in the light of existing theories.

Paper Details

Date Published: 1 February 1992
PDF: 10 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56984
Show Author Affiliations
Pawan Sikka, Technology Bhawan (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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