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Proceedings Paper

Activation spectroscopy of solid Ne
Author(s): I. V. Khyzhniy; O. N. Grigorashchenko; A. N. Ogurtsov; E. V. Savchenko; M. Frankowski; A. M. Smith-Gicklhorn; V. E. Bondybey
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Paper Abstract

Radiation-induced defects formed via electronic subsystem in solid Ne were studied combining thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) techniques. In the present paper the TSL and TSEE measurements of solid Ne were performed for the first time. The whole set of obtained experimental data suggests that in solid Ne at the temperature 10.5 K the annihilation of electronically induced defects occurs. Comparing experimental data with theoretical calculation the atomic configuration of radiation-induced defects was elucidated.

Paper Details

Date Published: 20 July 2004
PDF: 7 pages
Proc. SPIE 5507, XVI International Conference on Spectroscopy of Molecules and Crystals, (20 July 2004); doi: 10.1117/12.569826
Show Author Affiliations
I. V. Khyzhniy, B. Verkin Institute for Low Temperature Physics and Engineering (Ukraine)
Karazin Kharkov National Univ. (Ukraine)
O. N. Grigorashchenko, B. Verkin Institute for Low Temperature Physics and Engineering (Ukraine)
A. N. Ogurtsov, B. Verkin Institute for Low Temperature Physics and Engineering (Ukraine)
E. V. Savchenko, B. Verkin Institute for Low Temperature Physics and Engineering (Ukraine)
M. Frankowski, Institute of Fluid-Flow Machinery (Poland)
Technical Univ. Munich (Germany)
A. M. Smith-Gicklhorn, Technical Univ. Munich (Germany)
V. E. Bondybey, Technical Univ. Munich (Germany)


Published in SPIE Proceedings Vol. 5507:
XVI International Conference on Spectroscopy of Molecules and Crystals

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