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Proceedings Paper

Room temperature hydrogenation studies on silicon
Author(s): P. C. Srivastava; Deep Narayan Tripathi; S. Chandra
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Paper Abstract

Pd/Si devices both on n/n+ and p/p+ substrates have been placed in hydrogen atmosphere with the intention of introducing atomic hydrogen in silicon at room temperature. The palladium films on the top of the silicon substrates absorbs hydrogen to form PdHx, and the hydrogen is subsequently released into silicon, which causes the passivation effect. The shallow dopants, both in n and p silicon substrates, are passivated to the extent of 30% and 50% respectively on hydrogenation. Frequency dispersion of capacitance shows the hydrogen passivation of deep states.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56980
Show Author Affiliations
P. C. Srivastava, Banaras Hindu Univ. (India)
Deep Narayan Tripathi, Banaras Hindu Univ. (India)
S. Chandra, Banaras Hindu Univ. (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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