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Proceedings Paper

XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon
Author(s): S. K. Dubey; A. D. Yadav; P. M. Raole; P. D. Prabhawalkar
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Paper Abstract

Aluminum films (99.999%) were deposited onto p-type <100< silicon wafers. The samples were implanted at room temperature with 1 X 1017, 3 X 1017 and 5 X 1017 O2PLU - cm-2 at 30 keV. XPS spectra was recorded for Al2p3/2 and Si2p lines at various depths. XPS studies confirmed the formation of Al2O3 at all doses and SiO2 at 5 X 1017 O2+ - cm-2.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56979
Show Author Affiliations
S. K. Dubey, Univ. of Bombay (India)
A. D. Yadav, Univ. of Bombay (India)
P. M. Raole, Indian Institute of Technology (India)
P. D. Prabhawalkar, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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