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Proceedings Paper

Electrical characterization of the reactive-ion-etch-induced damages in silicon
Author(s): N. Ramadas; Vayalakkara Premachandran
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Paper Abstract

Reactive ion etch induced damage in silicon have been studied in terms of its electrical characteristics. Samples were plasma etched in the commonly used gases SF6, CF4 and O2. The extent of damage was determined by evaluating the Schottky barrier diodes fabricated on the etched silicon surfaces. The behavior of these defects was also studied. These results were further compared with damages induced by plasmas of chemically active (N2) and chemically inactive (Ar) gases.

Paper Details

Date Published: 1 February 1992
PDF: 4 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56976
Show Author Affiliations
N. Ramadas, Indian Telephone Industries (India)
Vayalakkara Premachandran, Indian Telephone Industries (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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