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Proceedings Paper

Mechanism of etching of silicon-based materials in a reactive plasma
Author(s): Vayalakkara Premachandran
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Paper Abstract

The numerous interdependent variables existing in the reactive ion etch process complicates the understanding of the etch mechanisms operating in the plasma processing. The knowledge of the exact mechanisms will, however, be useful for developing an etch process with improved etch rate, etch profile, selectivity, uniformity, etc. The results of a detailed study on the etch behavior of Si, SiO2, and Si3 N4 in fluorine and chlorine containing gas plasmas are reported in this paper, to arrive at some of the possible mechanisms operating in the reactive ion etch process.

Paper Details

Date Published: 1 February 1992
PDF: 6 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56974
Show Author Affiliations
Vayalakkara Premachandran, Indian Telephone Industries (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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