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Proceedings Paper

Effect of carrier diffusion on the breakdown characteristics of avalanche diodes
Author(s): J. P. Banerjee; R. Mukherjee; M. Mitra; S. K. Ray
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Paper Abstract

The effect of carrier diffusion on the breakdown characteristics of GaAs and InP avalanche diodes has been investigated using experimentally reported diffusion constants and ionization rates of electron and holes in semiconductors. The results show that diffusion causes some change in current distribution and electric field profile in the depletion layer of both GaAs and InP diodes. The avalanche zone is widened and the breakdown voltage decreases due to diffusion.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56972
Show Author Affiliations
J. P. Banerjee, Univ. of Calcutta (India)
R. Mukherjee, T.D.B. College (India)
M. Mitra, Univ. of Calcutta (India)
S. K. Ray, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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