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Proceedings Paper

Studies on ITO/Si junctions prepared by spray pyrolysis technique
Author(s): A. Subrahmanyam; V. Vasu
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Paper Abstract

This paper deals with the photovoltaic behavior of the indium tin oxide (ITO)/silicon (single crystal) heterojunctions prepared by spray pyrolysis technique. The dependence of the photovoltaic properties on process temperature (Tp) and on the oxidation time (tox) have been studied. ITO on p-Si yielded ohmic contact. A photoconversion efficiency of 9.4% is observed (under GE-ELH illumination of 100 mW/cm2) for both small (0.04 cm2) and large (1.0 cm2) areas of ITO/n-Si junctions prepared at a temperature of 380 degree(s)C and for an oxidation time of 60 sec. The junctions are observed to be quite stable with time. An attempt is made to understand the interfacial oxide layer (SiOx) and its effect on the photoconversion in these junctions.

Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56964
Show Author Affiliations
A. Subrahmanyam, Indian Institute of Technology (India)
V. Vasu, Indian Institute of Technology (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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