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Proceedings Paper

Influence of dopants on the electrical transport properties of Pbo.8Sno2Te thin films
Author(s): Pawan Sikka
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Paper Abstract

Thin films of doped and undoped Pbo.8Sno.2Te were grown by flash evaporation onto Kbr and mica substrates kept at 400 degree(s)C. In order to grow doped films, the polycrystalline charge containing different concentrations of indium, thallium, bismuth, and antimony was used. The dc conductivity and Hall coefficient measurements were made on these films. Indium and bismuth doped films were found to be n-type, whereas undoped, thallium and antimony doped films were found to be p-type.

Paper Details

Date Published: 1 February 1992
PDF: 8 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56963
Show Author Affiliations
Pawan Sikka, Technology Bhawan (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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