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Proceedings Paper

Change of spectrums of electroluminescence epitaxial lightdiode structures during an acoustic emission
Author(s): Oleg V. Lyashenko; Yuriy O. Myagchenko; Vitaliy P. Veleshchuk
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Paper Abstract

For the first time it is shown, that the correlation in changes of electroluminescence spectrum and a threshold of origin of an acoustic emission in epitaxial lightdiode n+-n-p-structures GaP0.85As0.15 takes place. It is shown, that the density of a direct current of diode determines intensity of discrete acoustic emission, detrusion and redistribution of intensity in maximums of an electroluminescence spectrum, velocity and quantity of a degradation of emissive power.

Paper Details

Date Published: 20 July 2004
PDF: 4 pages
Proc. SPIE 5507, XVI International Conference on Spectroscopy of Molecules and Crystals, (20 July 2004); doi: 10.1117/12.569616
Show Author Affiliations
Oleg V. Lyashenko, Taras Shevchenko National Univ. of Kyiv (Ukraine)
Yuriy O. Myagchenko, Taras Shevchenko National Univ. of Kyiv (Ukraine)
Vitaliy P. Veleshchuk, Taras Shevchenko National Univ. of Kyiv (Ukraine)


Published in SPIE Proceedings Vol. 5507:
XVI International Conference on Spectroscopy of Molecules and Crystals
Galyna O. Puchkovska; Tatiana A. Gavrilko; Olexandr I. Lizengevich, Editor(s)

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