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Proceedings Paper

Preparation and characterization of pulse-plated CdSe films
Author(s): K. R. Murali; V. Subramanian; N. Rangarajan; A. S. Lakshmanan; S. K. Rangarajan
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Paper Abstract

Pulse deposition at room temperature was applied to obtain CdSe thin films from an aqueous bath consisting of CdSO4 and SeO2 on titanium substrates, employing a range of current densities from 80 - 550 mA cm-2. The films were polycrystalline with a hexagonal structure. The pulse deposited films were observed to show greater uniformity and large grain sizes than the conventionally deposited ones. The films, heat-sensitized and vacuum annealed, showed a flat-band potential of -1.17 V (SCE) and a high energy conversion efficiency of 6.3% at 60 mW cm2 in polysulphide redox after photoetching. The optical band gap was 1.7 eV.

Paper Details

Date Published: 1 February 1992
PDF: 7 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56960
Show Author Affiliations
K. R. Murali, Central Electrochemical Research Institute (India)
V. Subramanian, Central Electrochemical Research Institute (India)
N. Rangarajan, Central Electrochemical Research Institute (India)
A. S. Lakshmanan, Central Electrochemical Research Institute (India)
S. K. Rangarajan, Central Electrochemical Research Institute (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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