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Proceedings Paper

Printability evaluation for 800-nm contact hole with repaired patterns according to exposing condition
Author(s): Sang Pyo Kim; Sang Chul Kim; Hee Chun Kim; Sang Lee Lee; Yong Kyoo Choi; Oscar Han
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Paper Abstract

We investigated the defect printability of KrF attenuated PSM. To analyze the printability of PSM defects, the programmed defect mask was designed and fabricated. The programmed defect mask contains background pattern layer of 800nm contact holes. Various types and sizes of MoSi defects such as extensions, dots and holes were programmed on the background patterns. We used a KrF excimer step-and-scan exposure system for wafer printing test. Based on the experimental results, we defined the maximum non-printable defects size of MoSi defects and tested repair performance of current tools by comparing the printability of defect pattern between pre-repair and post-repair. In addition, we calculated CD of defected patterns by simulation and compared it with the print CD.

Paper Details

Date Published: 6 December 2004
PDF: 8 pages
Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); doi: 10.1117/12.569387
Show Author Affiliations
Sang Pyo Kim, Hynix Semiconductor, Inc. (South Korea)
Sang Chul Kim, Hynix Semiconductor, Inc. (South Korea)
Hee Chun Kim, Hynix Semiconductor, Inc. (South Korea)
Sang Lee Lee, Hynix Semiconductor, Inc. (South Korea)
Yong Kyoo Choi, Hynix Semiconductor, Inc. (South Korea)
Oscar Han, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 5567:
24th Annual BACUS Symposium on Photomask Technology
Wolfgang Staud; J. Tracy Weed, Editor(s)

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